Event

International Workshop on Nitride Semiconductors 2018

Date&Time: November 11-16, 2018
Venue: The Ishikawa Ongakudo, the ANA Crowne Plaza Hotel Kanazawa, and Motenashi Dome, Kanazawa.

For more details, please see the homepage of International Workshop on Nitride Semiconductors 2018
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Researchers from Fraunhofer Institute for Applied Solid State Physics IAF will hold talks at the International Workshop on Nitride Semiconductors 2018 (IWN 2018), an international biennial-held workshop covering wide range of III-Nitride Semiconductor science, engineering and industry.

 

Photodetectors
November 13 (Tue), 8:30-10:25, Room Zuiun

9:40-9:55 ImpactionizationofelectronsandholesinhighAl-contentAlGaN-basedavalanche photodiodes
Lars Hahn, Thorsten Passow, Lutz Kirste, Frank Rutz, Rachid Driad, Stefano Leone, Robert Rehm, and Oliver Ambacher
FraunhoferInsitute for Applied Solidstate Physics IAF, Germany

RF Devices
November 13 (Tue), 10:55-12:45, Room Ohtori

11:20 - 11:45 IAF GaN-technology development towards 100 GHz and beyond
Peter Brueckner, Sebastian Krause, Maciej Cwiklinski, Michael Dammann, and Ruediger Quay
FraunhoferInstitute for Applied Solid State Physics IAF, Germany

Growth for HEMTs
November 15 (Thu), 10:55-12:55, Room Zuiun

11:10-11:25 Investigation of growth parameters for (Sc,AI)N-barrier HEMT structures by plasma-assisted MBE
Kathrin Frei (Materials Research Center Freiburg, University of Freiburg), Lutz Kirste (Fraunhofer IAF), Mario Prescher (Fraunhofer IAF), Sebastian Schütt (Fraunhofer IAF), Rolf Aidam (Fraunhofer IAF), Stefan Müller (Fraunhofer IAF), Adrian Vogt (Materials Research Center Freiburg, University of Freiburg), Oliver Ambacher (Fraunhofer IAF, Department of Sustainable Systems Engineering, University of Freiburg) and Michael Fiederle (Materials Research Center Freiburg, University of Freiburg)

 

Furthermore, Fraunhofer Institute for Integrated Systems and Device Technology(IISB) and Fraunhofer Institute for Applied Solid State Physics (IAF) are having Poster Sessions.

 

For more details, please see the Program of International Workshop on Nitride Semiconductors 2018