The International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Date: September 29th - October 4th, 2013
Venue: Phoenix Seagaia Resort (Miyazaki)
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Researchers of Fraunhofer Institute for Integrated Systems and Device Technology (IISB) will hold talks at ICSCRM 2013.
<Program>
October 1st (Tue)
Poster Session: Room Foyer and Rangyoku
16:00 - 18:00 Impact of a High Temperature Anneal on 4H-SiC Trench Profiles
C. T. Banzhaf, Robert Bosch GmbH (Author)
M. Rambach, Robert Bosch GmbH
A. Trautmann, Robert Bosch GmbH
A. J. Bauer, Fraunhofer IISB
L. Frey, Fraunhofer IISB, University of Erlangen-Nuremberg
16:00 - 18:00 Systematic Analysis of the High- and Low-Field Channel Mobility in
Lateral 4H-SiC MOSFETs
C. Strenger, Fraunhofer IISB,
The Wide Bandgap Semiconductor Alliance (WISEA)
October 2nd (Wed)
Poster Session: Room Foyer and Rangyoku
16:00 - 18:00 HCl Assisted Growth of Thick Epilayers for Bipolar Power Devices
B. Kallinger, Fraunhofer IISB
16:00 - 18:00 Influence of Diverse Post-Trench Processes on the Electrical
Performance of Thick Bottom Oxide 4H-SiC Trench-MOS Structures
C. T. Banzhaf, Robert Bosch GmbH (Author)
M. Grieb, Robert Bosch GmbH
A. Trautmann, Robert Bosch GmbH
A. J. Bauer, Fraunhofer IISB
L. Frey, Fraunhofer IISB, University of Erlangen-Nuremberg
16:00 - 18:00 Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels
of 4H-SiC MOSFET Transistors
S. Noll, Robert Bosch GmbH (Author)
M. Rambach, Robert Bosch GmbH
M. Grieb, Robert Bosch GmbH
D. Scholten, Robert Bosch GmbH
A. Bauer, Fraunhofer IISB
L. Frey, Fraunhofer IISB, University of Erlangen-Nuremberg
October 3rd (Thu)
MOS Fundamentals: Room Juyo
11:00 - 11:30 Hall Factor Calculation for the Characterization of Transport Properties
in n-Channel 4H-SiC MOSFETs
V. Uhnevionak, Fraunhofer IISB,
The Wide Bandgap Semiconductor Alliance (WISEA)
Etching & Polishing: Room Tenzui
15:05 - 15:25 High Quality and High Speed Cutting of 4H-SiC JFET Wafers Including
PCM Structures by Using Thermal Laser Separation
D. Lewke, Fraunhofer IISB
Poster Session: Room Foyer and Rangyoku
15:40 - 17:40 Comparison of Carrier Lifetime Measurements and Mapping Using
Photoluminscence and μ-PCD
B. Kallinger, Fraunhofer IISB
15:40 - 17:40 Temperature and Electrical Field Dependence of Ambipolar Mobility in
n-Doped 4H-SiC
A. Hürner, University of Erlangen-Nuremberg (Author)
C. Bonse, University of Erlangen-Nuremberg
B. Kallinger, Fraunhofer IISB
H. Mitlehner, Fraunhofer IISB
T. Erlbacher, Fraunhofer IISB
V. Häublein, Fraunhofer IISB
A. J. Bauer, Fraunhofer IISB
L. Frey, University of Erlangen-Nuremberg, Fraunhofer IISB
For detailed information and registration, please refer to the official homepage below:
The International Conference on Silicon Carbide and Related Materials