Event

The International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)

Date: September 29th - October 4th, 2013
Venue: Phoenix Seagaia Resort (Miyazaki)
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Researchers of Fraunhofer Institute for Integrated Systems and Device Technology (IISB) will hold talks at ICSCRM 2013.


<Program>

October 1st (Tue)

Poster Session: Room Foyer and Rangyoku

16:00 - 18:00 Impact of a High Temperature Anneal on 4H-SiC Trench Profiles

        C. T. Banzhaf, Robert Bosch GmbH (Author)
        M. Rambach, Robert Bosch GmbH
        A. Trautmann, Robert Bosch GmbH
        A. J. Bauer, Fraunhofer IISB
        L. Frey, Fraunhofer IISB, University of Erlangen-Nuremberg


16:00 - 18:00 Systematic Analysis of the High- and Low-Field Channel Mobility in
       Lateral 4H-SiC MOSFETs

        C. Strenger, Fraunhofer IISB,
             The Wide Bandgap Semiconductor Alliance (WISEA)



October 2nd (Wed)

Poster Session: Room Foyer and Rangyoku

16:00 - 18:00 HCl Assisted Growth of Thick Epilayers for Bipolar Power Devices
        B. Kallinger, Fraunhofer IISB


16:00 - 18:00 Influence of Diverse Post-Trench Processes on the Electrical
       Performance of Thick Bottom Oxide 4H-SiC Trench-MOS Structures

        C. T. Banzhaf, Robert Bosch GmbH (Author)
        M. Grieb, Robert Bosch GmbH
        A. Trautmann, Robert Bosch GmbH
        A. J. Bauer, Fraunhofer IISB
        L. Frey, Fraunhofer IISB, University of Erlangen-Nuremberg


16:00 - 18:00 Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels
       of 4H-SiC MOSFET Transistors

        S. Noll, Robert Bosch GmbH (Author)
        M. Rambach, Robert Bosch GmbH
        M. Grieb, Robert Bosch GmbH
        D. Scholten, Robert Bosch GmbH
        A. Bauer, Fraunhofer IISB
        L. Frey, Fraunhofer IISB, University of Erlangen-Nuremberg



October 3rd (Thu)

MOS Fundamentals: Room Juyo

11:00 - 11:30 Hall Factor Calculation for the Characterization of Transport Properties
       in n-Channel 4H-SiC MOSFETs

        V. Uhnevionak, Fraunhofer IISB,
              The Wide Bandgap Semiconductor Alliance (WISEA)


Etching & Polishing: Room Tenzui

15:05 - 15:25 High Quality and High Speed Cutting of 4H-SiC JFET Wafers Including
       PCM Structures by Using Thermal Laser Separation

        D. Lewke, Fraunhofer IISB

Poster Session: Room Foyer and Rangyoku

15:40 - 17:40 Comparison of Carrier Lifetime Measurements and Mapping Using
       Photoluminscence and μ-PCD

        B. Kallinger, Fraunhofer IISB


15:40 - 17:40 Temperature and Electrical Field Dependence of Ambipolar Mobility in
       n-Doped 4H-SiC

        A. Hürner, University of Erlangen-Nuremberg (Author)
        C. Bonse, University of Erlangen-Nuremberg
        B. Kallinger, Fraunhofer IISB
        H. Mitlehner, Fraunhofer IISB
        T. Erlbacher, Fraunhofer IISB
        V. Häublein, Fraunhofer IISB
        A. J. Bauer, Fraunhofer IISB
        L. Frey, University of Erlangen-Nuremberg, Fraunhofer IISB




For detailed information and registration, please refer to the official homepage below:
The International Conference on Silicon Carbide and Related Materials